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BUR21 NPN Transistor

BUR21 Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 1. High Switching Speed. High DC Current Gain- : hFE= 10(Min.

BUR21 Applications

* Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 300 V 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collect

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Datasheet Details

Part number
BUR21
Manufacturer
INCHANGE
File Size
204.09 KB
Datasheet
BUR21-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BUR21-like datasheet