BUR20
INCHANGE
201.02kb
Npn transistor.
TAGS
📁 Related Datasheet
BUR21 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V (Max.) @IC= 25A ·High Switching Speed ·High DC Curre.
BUR21 - Bipolar NPN Device
(Seme LAB)
BUR21
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BUR22 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V (Max.) @IC= 20A ·High Switching Speed ·High DC Curre.
BUR24 - Bipolar NPN Device
(Seme LAB)
BUR24
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BUR50 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min) ·High Current Capability ·Minimum Lot-to-.
BUR50 - Bipolar NPN Device
(Seme LAB)
BUR50
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BUR51 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min) ·High Current Capability ·High Switching .
BUR51 - HIGH CURRENT NPN SILICON TRANSISTOR
(STMicroelectronics)
® BUR51
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR
DESCRIPTION The BUR51 is a silicon Multiepitax.
BUR51 - Bipolar NPN Device
(Semelab)
BUR51
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN D.
BUR52 - HIGH CURRENT NPN SILICON TRANSISTOR
(STMicroelectronics)
® BUR52
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR s MAINTAINS GOOD SWITCHING
PERFORMANCE EVEN WI.