BUR20 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High DC Current Gain-hFE=10(Min)@IC = 50A. Low Saturation Voltage- VCE(sat)= 1. Minimum Lot-to-Lot variations for robus.

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Datasheet Specifications

Part number: BUR20
Manufacturer: INCHANGE
File Size: 201.02 KB
Datasheet: BUR20-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50

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BUR20 NPN Transistor INCHANGE

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