BUR22 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 1. High Switching Speed. High DC Current Gain- : hFE= 10(Min.

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Datasheet Specifications

Part number: BUR22
Manufacturer: INCHANGE
File Size: 204.03 KB
Datasheet: BUR22-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 350 V 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collect

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BUR22 NPN Transistor INCHANGE

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