Datasheet4U Logo Datasheet4U.com

BUR22 NPN Transistor

BUR22 Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 1. High Switching Speed. High DC Current Gain- : hFE= 10(Min.

BUR22 Applications

* Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 350 V 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collect

📥 Download Datasheet

Preview of BUR22 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BUR22
Manufacturer
INCHANGE
File Size
204.03 KB
Datasheet
BUR22-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BUR24 - Bipolar NPN Device (Seme LAB)
  • BUR52 - HIGH CURRENT NPN SILICON TRANSISTOR (STMicroelectronics)
  • BUR54 - Silicon NPN Power Transistor (Inchange Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE BUR22-like datasheet