BUR51 Datasheet, Device, Semelab

PDF File Details

Part number:

BUR51

Manufacturer:

Semelab

File Size:

10.64kb

Download:

📄 Datasheet

Description:

Bipolar npn device.

TAGS

BUR51

Semelab

📁 Related Datasheet

BUR50 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min) ·High Current Capability ·Minimum Lot-to-.

BUR50 - Bipolar NPN Device (Seme LAB)
BUR50 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BUR51 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Current Capability ·High Switching .

BUR51 - HIGH CURRENT NPN SILICON TRANSISTOR (STMicroelectronics)
® BUR51 HIGH CURRENT NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitax.

BUR52 - HIGH CURRENT NPN SILICON TRANSISTOR (STMicroelectronics)
® BUR52 HIGH CURRENT NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WI.

BUR52 - Silicon NPN Power Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR52 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(S.

BUR52 - HIGH CURRENT NPN SILICON (Seme LAB)
BUR52 MECHANICAL DATA Dimensions in mm(inches) HIGH CURRENT NPN SILICON TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.

BUR52 - HIGH CURRENT NPN SILICON TRANSISTORS (Comset Semiconductors)
BUR52 HIGH CURRENT NPN SILICON TRANSISTORS The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented fo.

BUR54 - Silicon NPN Power Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR54 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(S.

BUR20 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain-hFE=10(Min)@IC = 50A ·Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A ·Minim.