BUV37 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

BUV37

Manufacturer:

Inchange Semiconductor

File Size:

138.13kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.)

Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@

BUV37 Application

• Applications
• Designed for use in automotive ignition circuits. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAME

TAGS

BUV37

Inchange Semiconductor

📁 Related Datasheet

BUV37 - POWER TRANSISTORS (Mospec Semiconductor)
A A .

BUV39 - Bipolar NPN Device (Seme LAB)
.DataSheet.co.kr BUV39 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15.

BUV39 - Silicon NPN Power Transistor (Inchange Semiconductor)
.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV39 DESCRIPTION ·Low Collector Saturation.

BUV10 - Silicon NPN Power Transistor (Inchange Semiconductor)
.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION ·High Switching Speed ·Hi.

BUV10N - Bipolar NPN Device in a Hermetically sealed TO3 Metal Package (Seme LAB)
BUV10N Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

BUV11 - 20 AMPERES NPN SILICON POWER METAL TRANSISTOR (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV11/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high current.

BUV11 - SITCHMODE Series NPN Silicon Power Transistor (ON Semiconductor)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV11/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high current.

BUV12 - Bipolar NPN Device (Seme LAB)
BUV12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BUV12 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A ·High Switching Speed ·High DC Curren.

BUV18 - NPN High Current Switching Transistors (ST Microelectronics)
w w w .d e e h s a t a . u t4 m o c .. .