BUV39 Silicon NPN Power Transistor

Inchange Semiconductor

Description

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV39 .
Low Collector Saturation Voltage: VCE(sat)= 0. High Switching Speed APPLICATIONS. Designed for high current, high sp.

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Datasheet Specifications

Part number: BUV39
Manufacturer: Inchange Semiconductor
File Size: 111.76 KB
Datasheet: BUV39_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=-1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Cont

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BUV39 Silicon NPN Power Transistor Inchange Semiconductor

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