BUV89 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perf.

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Datasheet Specifications

Part number: BUV89
Manufacturer: Inchange Semiconductor
File Size: 214.20 KB
Datasheet: BUV89_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in AC motor control systems from three- phase mains. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous

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BUV89 Silicon NPN Power Transistor Inchange Semiconductor

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