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IRF230 - N-Channel MOSFET Transistor

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Description

Drain Current ID= 9A@ TC=25℃ Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.40Ω(Max) High Power, High Speed Applications APPLICATIONS Switching power supplies, UPS AC and DC motor controls

High energy pulse circuits.

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Datasheet Details

Part number IRF230
Manufacturer Inchange Semiconductor
File Size 59.95 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF230 DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.40Ω(Max) ·High Power, High Speed Applications APPLICATIONS ·Switching power supplies, ·UPS ·AC and DC motor controls ·High energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 200 ±20 V V Drain Current-continuous@ TC=25℃ 9 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W isc website：www.
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