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IRF637

N-Channel Mosfet Transistor

IRF637 General Description


*Drain Current

*ID=6.5A@ TC=25℃
*Drain Source Voltage- : VDSS= 275V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.68Ω(Max)
*Nanosecond Switching Speed
*High Input Impedance APPLICATIONS
*High current , high speed switching
*Switch mode power supplies
.

IRF637 Datasheet (60.29 KB)

Preview of IRF637 PDF

Datasheet Details

Part number:

IRF637

Manufacturer:

Inchange Semiconductor

File Size:

60.29 KB

Description:

N-channel mosfet transistor.

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TAGS

IRF637 N-Channel Mosfet Transistor Inchange Semiconductor

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