KTD1510 - Silicon NPN Power Transistors
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A *High DC Current Gain : hFE= 5000(Min) @ IC= 7A, VCE= 4V *Complement to Type KTB2510 APPLICATIONS *High power amplifier applications *Recommended
