KTD1510 Silicon NPN Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KTD1510 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2. High DC.

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Datasheet Specifications

Part number: KTD1510
Manufacturer: Inchange Semiconductor
File Size: 146.13 KB
Datasheet: KTD1510-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* High power amplifier applications
* Recommended for 60W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous

KTD1510 Distributors

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KTD1510 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor KTD1510-like datasheet