KTD1510 - Silicon NPN Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	KTD1510
Manufacturer	Inchange Semiconductor
File Size	146.13 KB
Description	Silicon NPN Power Transistors
Datasheet	KTD1510 Datasheet
Additional preview pages of the KTD1510 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A High DC Current Gain : hFE= 5000(Min) @ IC= 7A, VCE= 4V Complement to Type KTB2510 APPLICATIONS High power amplifier applications Recommended for 60W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base

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Published: Nov 14, 2016 |