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KTD1510 Datasheet - Inchange Semiconductor

KTD1510 Silicon NPN Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A *High DC Current Gain : hFE= 5000(Min) @ IC= 7A, VCE= 4V *Complement to Type KTB2510 APPLICATIONS *High power amplifier applications *Recommended .

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Datasheet Details

Part number:

KTD1510

Manufacturer:

Inchange Semiconductor

File Size:

146.13 KB

Description:

Silicon npn power transistors.

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KTD1510 KTD1510 Silicon NPN Power Transistors Inchange Semiconductor

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