KTD1414 - Silicon NPN Power Transistors
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A *High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
