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KTD1414

Silicon NPN Power Transistors

KTD1414 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A
*High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

KTD1414 Datasheet (212.80 KB)

Preview of KTD1414 PDF

Datasheet Details

Part number:

KTD1414

Manufacturer:

Inchange Semiconductor

File Size:

212.80 KB

Description:

Silicon npn power transistors.

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KTD1414 Silicon NPN Power Transistors Inchange Semiconductor

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