KTD1414 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC C.

📥 Download Datasheet

KTD1414 Datasheet Preview — Preview of KTD1414 PDF

Datasheet Specifications

Part number: KTD1414
Manufacturer: Inchange Semiconductor
File Size: 212.80 KB
Datasheet: KTD1414-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Switching applications
* Hammer driver,pulse motor driver applications
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Col

KTD1414 Distributors

📁 Related Datasheet

KTD1411 KTD1413 KTD1415 KTD1415V KTD1003 KTD101B105M32A0T00

📌 All Tags

KTD1414 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor KTD1414-like datasheet