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KTD1414 Datasheet - Inchange Semiconductor

KTD1414 Silicon NPN Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A *High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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Datasheet Details

Part number:

KTD1414

Manufacturer:

Inchange Semiconductor

File Size:

212.80 KB

Description:

Silicon npn power transistors.

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