KTD2060 Datasheet - Inchange Semiconductor

KTD2060, Silicon NPN Power Transistors

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector Power Dissipation- : PC= 25W@ TC= 25℃. Low Collector Saturation Volt.

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KTD2060-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

KTD2060

Manufacturer:

Inchange Semiconductor

File Size:

214.46 KB

Description:

Silicon NPN Power Transistors

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC C

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KTD2060 Silicon NPN Power Transistors Inchange Semiconductor

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