KTD2060 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector Power Dissipation- : PC= 25W@ TC= 25℃. Low Collector Saturation Volt.

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Datasheet Specifications

Part number: KTD2060
Manufacturer: Inchange Semiconductor
File Size: 214.46 KB
Datasheet: KTD2060-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC C

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KTD2060 Silicon NPN Power Transistors Inchange Semiconductor

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