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KTD2058 - Silicon NPN Power Transistors

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Part number KTD2058
Manufacturer Inchange Semiconductor
File Size 215.78 KB
Description Silicon NPN Power Transistors
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Collector Power Dissipation : PC= 25 W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) Complement to Type KTB1366 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Coll

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