KTD2058 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Collector Power Dissipation : PC= 25 W@ TC= 25℃. Low Collector Saturation Vol.

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Datasheet Specifications

Part number: KTD2058
Manufacturer: Inchange Semiconductor
File Size: 215.78 KB
Datasheet: KTD2058-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 IB Base Current-Continuous 0.5 UNIT

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KTD2058 Silicon NPN Power Transistors Inchange Semiconductor

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