KTD2061 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Low Collector Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: KTD2061
Manufacturer: Inchange Semiconductor
File Size: 217.52 KB
Datasheet: KTD2061-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* High Voltage application
* TV, monitor vertical output application
* Driver stage application
* Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEB

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KTD2061 Silicon NPN Power Transistors Inchange Semiconductor

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