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KTD2061 Datasheet - Inchange Semiconductor

KTD2061 Silicon NPN Power Transistors

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) *Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA) *Complement to Type KTB1369 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High Volta.

KTD2061-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

KTD2061

Manufacturer:

Inchange Semiconductor

File Size:

217.52 KB

Description:

Silicon npn power transistors.

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KTD2061 KTD2061 Silicon NPN Power Transistors Inchange Semiconductor

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