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KTD2061 - Silicon NPN Power Transistors

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Part number KTD2061
Manufacturer Inchange Semiconductor
File Size 217.52 KB
Description Silicon NPN Power Transistors
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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA) Complement to Type KTB1369 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Voltage application TV, monitor vertical output application Driver stage application Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI

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