KTD2059 Datasheet - Inchange Semiconductor

KTD2059, Silicon NPN Power Transistors

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector Power Dissipation- : PC= 30W@ TC= 25℃. Low Collector Saturation Vol.

datasheet Preview Page 1 from Datasheet4u.com

KTD2059-InchangeSemiconductor.pdf

KTD2059 Datasheet Preview — Preview of KTD2059 PDF

Datasheet Details

Part number:

KTD2059

Manufacturer:

Inchange Semiconductor

File Size:

216.58 KB

Description:

Silicon NPN Power Transistors

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC

KTD2059 Distributors

📁 Related Datasheet

KTD2058 KTD2060 KTD2066 KTD2092 KTD2150 KTD2161

📌 All Tags

KTD2059 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor KTD2059-like datasheet