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KTD2059 - Silicon NPN Power Transistors

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Part number KTD2059
Manufacturer Inchange Semiconductor
File Size 216.58 KB
Description Silicon NPN Power Transistors
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector Power Dissipation- : PC= 30W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A) Complement to Type KTB1367 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications.

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