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KTD2059 Datasheet - Inchange Semiconductor

KTD2059 - Silicon NPN Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Collector Power Dissipation- : PC= 30W@ TC= 25℃ *Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A) *Complement to Type KTB1367 *Minimum Lot-to-Lot variations for robust device performance and r.

KTD2059-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

KTD2059

Manufacturer:

Inchange Semiconductor

File Size:

216.58 KB

Description:

Silicon npn power transistors.

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KTD2059 Silicon NPN Power Transistors Inchange Semiconductor