KTD1415V - EPITAXIAL PLANAR NPN TRANSISTOR
KTD1415V Features
* High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current Collector Powe
