* High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current Collector Powe
KTD1415V Datasheet (379.47 KB)
KTD1415V
KEC
379.47 KB
Epitaxial planar npn transistor.
SEMICONDUCTOR
TECHNICAL DATA
KTD1415V
EPITAXIAL PLANAR NPN TRANSISTOR
INDUSTRIAL USE. HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR .
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