KTD1411 - EPITAXIAL PLANAR NPN TRANSISTOR
KTD1411 Features
* High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEB
