MJE243 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

MJE243

Manufacturer:

Inchange Semiconductor

File Size:

214.48kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor.

Collector  –Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min)

DC Current Gain- : hFE = 40(Min) @ I

MJE243 Application

• Applications
• Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

TAGS

MJE243

Inchange Semiconductor

📁 Related Datasheet

MJE240 - COMPLEMENTARY SILICON POWER TRANSISTORS (Central Corp)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

MJE240 - (MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
.. .

MJE240 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor MJE240 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 80 V(Min) ·DC Current Gain- : hFE = 40(Min).

MJE241 - (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

MJE241 - (MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
.. .

MJE242 - (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

MJE242 - (MJE2xx) COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
.. .

MJE243 - NPN EPITAXIAL SILICON POWER TRANSISTOR (CDIL)
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plast.

MJE243 - 4 AMPERE POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D Complementary Silicon Power Plastic Transistors . . . designed for low power .

MJE243 - POWER TRANSISTORS (ON)
.. MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low p.