MJE253 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector. Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min). DC Current Gain- : hFE = 40(Min) @ IC= -0. Low Collector Sat.

📥 Download Datasheet

MJE253 Datasheet Preview — Preview of MJE253 PDF

Datasheet Specifications

Part number: MJE253
Manufacturer: Inchange Semiconductor
File Size: 214.73 KB
Datasheet: MJE253-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-

MJE253 Distributors

📁 Related Datasheet

MJE253G MJE250 MJE251 MJE252 MJE254 MJE200

📌 All Tags

MJE253 Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor MJE253-like datasheet