TIP142F Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= 5A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Complement to Type TIP147.

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Datasheet Specifications

Part number: TIP142F
Manufacturer: Inchange Semiconductor
File Size: 223.22 KB
Datasheet: TIP142F-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10

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TIP142 TIP142G TIP142T TIP140 TIP140F TIP140G

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TIP142F Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor TIP142F-like datasheet