TIP147T Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor TIP147T .
High DC Current Gain- : hFE = 1000(Min)@ IC= -5A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Complement to Type TIP1.

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Datasheet Specifications

Part number: TIP147T
Manufacturer: Inchange Semiconductor
File Size: 216.32 KB
Datasheet: TIP147T-InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous

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TIP147T Silicon PNP Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor TIP147T-like datasheet