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2SC3729 - Power Transistor

2SC3729 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust de.

2SC3729 Applications

* Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current-Continuous 5 A ICM Collector

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Power Transistor Inchange Semiconductor
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