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BD263 Silicon NPN Power Transistor

BD263 Description

isc Silicon NPN Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 60V. DC Current Gain. : hFE = 750(Min) @ IC= 1. Minimum Lot.

BD263 Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Con

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Datasheet Details

Part number
BD263
Manufacturer
Inchange Semiconductor
File Size
207.79 KB
Datasheet
BD263-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BD263-like datasheet