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BD550B Silicon NPN Power Transistors

BD550B Description

isc Silicon NPN Power Transistors .
High Power Dissipation. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min). Minimum Lot-to-Lot variations for robust device performa.

BD550B Applications

* Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 275 V 275 V 250 V VEBO Emitter

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Datasheet Details

Part number
BD550B
Manufacturer
Inchange Semiconductor
File Size
182.55 KB
Datasheet
BD550B-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Inchange Semiconductor BD550B-like datasheet