Datasheet4U Logo Datasheet4U.com

MJW21194 Silicon NPN Power Transistor

MJW21194 Description

isc Silicon NPN Power Transistor .
Total Harmonic Distortion Characterized. High DC Current Gain. hFE = 20 Min @ I C = 8 Adc. Complement to Type MJW21193.

MJW21194 Applications

* Designed for high power audio output,disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous

📥 Download Datasheet

Preview of MJW21194 PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJW21194
Manufacturer
Inchange Semiconductor
File Size
220.77 KB
Datasheet
MJW21194-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • MJW21191 - 8.0 AMPERES POWER TRANSISTORS (Motorola)
  • MJW21192 - 8.0 AMPERES POWER TRANSISTORS (Motorola)
  • MJW21193 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • MJW21195 - Silicon Power Transistors (ON)
  • MJW21196 - Silicon Power Transistors (ON)
  • MJW0281A - Complementary NPN-PNP Power Bipolar Transistors (ON Semiconductor)
  • MJW0302A - Complementary NPN-PNP Power Bipolar Transistors (ON Semiconductor)
  • MJW1302A - PNP Silicon Power Bipolar Transistors (ON Semiconductor)

📌 All Tags

Inchange Semiconductor MJW21194-like datasheet