BFP520F Low Noise Silicon Bipolar RF Transistor

Infineon Technologies AG

BFP520F Description

Low Noise Silicon Bipolar RF Transistor * For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz Minimum noise figure N.

Datasheet Details

📁 Related Datasheet

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Infineon Technologies AG BFP520F-like datasheet