BFP540ESD
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Low noise silicon bipolar rf transistor.
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BFP540 - Low Noise Silicon Bipolar RF Transistor
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Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier • Outstanding Gms = 21.5 dB at 1.8 GHz
Minimum noise figure NFmin =.
BFP540F - NPN Silicon RF Transistor
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NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • Gold metalliza.
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Low profile robust silicon NPN RF bipolar transistor
Product description
The BFP540FESD is a low noise device based on a grounded emitter .
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SIEGET ®45
NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Fi.
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• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electro.
