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BFP540FESD - Low profile robust silicon NPN RF bipolar transistor

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Description

The BFP540FESD is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family.

Its high gain and ESD structure make the device suitable for applications that requires highly robustness and high performance.

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Datasheet Details

Part number BFP540FESD
Manufacturer Infineon Technologies
File Size 176.43 KB
Description Low profile robust silicon NPN RF bipolar transistor
Datasheet download datasheet BFP540FESD Datasheet
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    BFP540FESD Low profile robust silicon NPN RF bipolar transistor Product description The BFP540FESD is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its high gain and ESD structure make the device suitable for applications that requires highly robustness and high performance. It remains cost competitive without compromising on ease of use. Feature list • Minimum noise figure NFmin = 0.9 dB at 1.8 GHz, 2 V, 5 mA • High gain Gms = 20 dB at 1.8 GHz, 2 V, 20 mA • OIP3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA • High ESD robustness, typical 1 kV (HBM) Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020.
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