📁 CFY66 Similar Datasheet
    
- CFY25  - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
 
- CFY25-17  - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
 
- CFY25-20  - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
 
- CFY25-20P  - HiRel X-Band GaAs MOSFET (Infineon)
 
- CFY25-23  - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
 
- CFY25-23P  - HiRel X-Band GaAs MOSFET (Infineon)
 
- CFY25-P  - HiRel X-Band GaAs MOSFET (Infineon)
 
- CFY30  - GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) (Siemens Semiconductor Group)