CFY67-08 - HiRel K-Band GaAs Super Low Noise HEMT

Infineon Technologies AG

Datasheet Details

Part number	CFY67-08
Manufacturer	Infineon Technologies AG
File Size	747.16 KB
Description	HiRel K-Band GaAs Super Low Noise HEMT
Datasheet	CFY67-08_InfineonTechnologiesAG.pdf

📁 CFY67-08 Similar Datasheet

CFY25 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-17 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-20 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-20P - HiRel X-Band GaAs MOSFET (Infineon)
CFY25-23 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-23P - HiRel X-Band GaAs MOSFET (Infineon)
CFY25-P - HiRel X-Band GaAs MOSFET (Infineon)
CFY30 - GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) (Siemens Semiconductor Group)

Other Datasheets by Infineon Technologies AG

Published: Mar 23, 2005 |