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CFY67-10P - HiRel K-Band GaAs Super Low Noise HEMT

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📁 CFY67-10P Similar Datasheet

  • CFY25 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
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  • CFY25-20 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
  • CFY25-20P - HiRel X-Band GaAs MOSFET (Infineon)
  • CFY25-23 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
  • CFY25-23P - HiRel X-Band GaAs MOSFET (Infineon)
  • CFY25-P - HiRel X-Band GaAs MOSFET (Infineon)
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Other Datasheets by Infineon Technologies AG
  • CFY67-10 - HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67-06 - HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67-08 - HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67-08P - HiRel K-Band GaAs Super Low Noise HEMT
  • CFY67 - HiRel K-Band GaAs Super Low Noise HEMT
  • CFY66 - HiRel K-Band GaAs Super Low Noise HEMT
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