IPD06N03L
Infineon ↗ Technologies AG
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Optimos buck converter series. and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology,
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IPD06N03LA - OptiMOS 2 Power-Transistor
(Infineon Technologies AG)
IPD06N03LA IPU06N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target appli.
IPD06N03LAG - Power Transistor
(Infineon)
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application
• N-channel, l.
IPD06N03LZG - Power-Transistor
(Infineon)
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications
• N-channel, .
IPD060N03L - MOSFET
(Infineon)
IPD060N03L G
MOSFET
OptiMOSª3 Power-Transistor, 30 V
Features
• Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualifie.
IPD060N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤6mΩ ·Enhancement mode: ·100% avalanche .
IPD060N03LG - MOSFET
(Infineon Technologies)
IPD060N03L G
MOSFET
OptiMOSª3 Power-Transistor, 30 V
Features
• Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualifie.
IPD068N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanc.
IPD068N10N3 - Power-Transistor
(Infineon)
IPD068N10N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.
IPD068N10N3G - Power-Transistor
(Infineon Technologies)
IPD068N10N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.
IPD068P03L3 - N-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanc.