IPD06N03LZG Datasheet, power-transistor equivalent, Infineon

IPD06N03LZG Features

• Power-transistor
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R

PDF File Details

Part number:

IPD06N03LZG

Manufacturer:

Infineon ↗

File Size:

501.23kb

Download:

📄 Datasheet

Description:

Power-transistor.

IPD06N03LZG Application

• Applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance

TAGS

IPD06N03LZG

Infineon

📁 Related Datasheet

IPD06N03L - OptiMOS Buck converter series (Infineon Technologies AG)
IPD06N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID 30 5.9 50 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Res.

IPD06N03LA - OptiMOS 2 Power-Transistor (Infineon Technologies AG)
IPD06N03LA IPU06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target appli.

IPD06N03LAG - Power Transistor (Infineon)
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, l.

IPD060N03L - MOSFET (Infineon)
IPD060N03L G MOSFET OptiMOSª3 Power-Transistor, 30 V Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualifie.

IPD060N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6mΩ ·Enhancement mode: ·100% avalanche .

IPD060N03LG - MOSFET (Infineon Technologies)
IPD060N03L G MOSFET OptiMOSª3 Power-Transistor, 30 V Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualifie.

IPD068N10N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanc.

IPD068N10N3 - Power-Transistor (Infineon)
IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.

IPD068N10N3G - Power-Transistor (Infineon Technologies)
IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.

IPD068P03L3 - N-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanc.