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IPD06P004N MOSFET

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Description

IPD06P004N MOSFET OptiMOSTM Power Transistor, -60 V .

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Features

* P-Channel
* Very low on-resistance RDS(on)
* 100% avalanche tested
* Normal Level
* Enhancement mode
* Pb-free lead plating; RoHS compliant

Applications

* according to the relevant tests of JEDEC47/20/22 Table 1 Key Performance Parameters Parameter Value Unit VDS -60 V RDS(on),max 90 mΩ ID -16.4 A D-PAK tab 1 3 Drain tab Gate Pin 1 Source Pin 3 Type / Ordering Code IPD06P004N Package PG-TO 252-3 Marking 06P004N Related Links - F

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