IPD068N10N3 Datasheet - INCHANGE

IPD068N10N3, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3 *.

datasheet Preview Page 1 from Datasheet4u.com

IPD068N10N3-INCHANGE.pdf

IPD068N10N3 Datasheet Preview — Preview of IPD068N10N3 PDF

Datasheet Details

Part number:

IPD068N10N3

Manufacturer:

INCHANGE

File Size:

238.98 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤6.8mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High frequency switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IPD068N10N3 Distributors

📁 Related Datasheet

IPD068N10N3G IPD068P03L3G IPD060N03L IPD060N03LG IPD06N03L IPD06N03LA

📌 All Tags

IPD068N10N3 N-Channel MOSFET INCHANGE

INCHANGE IPD068N10N3-like datasheet