IPD068P03L3 Datasheet - INCHANGE

IPD068P03L3, N-Channel MOSFET

isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 *.

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IPD068P03L3-INCHANGE.pdf

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Datasheet Details

Part number:

IPD068P03L3

Manufacturer:

INCHANGE

File Size:

242.78 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤6.8mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* 175°C operating junction temperature
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IPD068P03L3 N-Channel MOSFET INCHANGE

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