IPD068P03L3 - N-Channel MOSFET
IPD068P03L3 Features
* Static drain-source on-resistance: RDS(on)≤6.8mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* 175°C operating junction temperature
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P