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IPD068N10N3G Datasheet - Infineon Technologies

IPD068N10N3G, Power-Transistor

IPD068N10N3 G OptiMOS®3 Power-Transistor .
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Datasheet Details

Part number:

IPD068N10N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

483.00 KB

Description:

Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) f

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