IPD068N10N3G Power-Transistor

Infineon Technologies

Description

IPD068N10N3 G OptiMOS®3 Power-Transistor .

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Datasheet Specifications

Part number: IPD068N10N3G
Manufacturer: Infineon ↗ Technologies
File Size: 483.00 KB
Datasheet: IPD068N10N3G-InfineonTechnologies.pdf
Description: Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) f

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IPD068N10N3G Power-Transistor Infineon Technologies

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