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IKW75N65EL5

IGBT

IKW75N65EL5 Features

* C Low VCE(sat) L5 technology offering

* Very low collector-emitter saturation voltage VCEsat

* Best-in-Class tradeoff between conduction and switching losses

* 650V breakdown voltage

* Low gate charge QG

* Maximum junction temperature 175°C

* Qualif

IKW75N65EL5 General Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 .

IKW75N65EL5 Datasheet (1.70 MB)

Preview of IKW75N65EL5 PDF

Datasheet Details

Part number:

IKW75N65EL5

Manufacturer:

Infineon ↗ Technologies

File Size:

1.70 MB

Description:

Igbt.
IGBT Low VCE(sat) IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW75N65EL5 650V DuoPack IGBT and diode Low.

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TAGS

IKW75N65EL5 IGBT Infineon Technologies

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