IPB026N06N Datasheet, Power-transistor, Infineon Technologies

IPB026N06N Features

• Power-transistor
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according t

PDF File Details

Part number:

IPB026N06N

Manufacturer:

Infineon ↗ Technologies

File Size:

541.19kb

Download:

📄 Datasheet

Description:

Power-transistor.

IPB026N06N Application

• Applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qo

TAGS

IPB026N06N

Infineon Technologies

📁 Related Datasheet

IPB026N06N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

IPB020N08N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª 5 Power-Transistor, 80 V IPB020N08N5 Data Sheet Rev. 2.0 Final Power Manag.

IPB020N10N5 - MOSFET (Infineon)
IPB020N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • N-channel, normal level • Optimized for FOMOSS • Very low on-resistance RDS(on) • 175.

IPB020N10N5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to .

IPB020N10N5LF - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB020N10N5LF ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc.

IPB020N10N5LF - MOSFET (Infineon)
IPB020N10N5LF MOSFET OptiMOSTM 5 Linear FET, 100 V Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf.

IPB021N06N3 - Power Transistor (Infineon)
Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q .

IPB021N06N3G - Power-Transistor (Infineon Technologies)
Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q .

IPB021N06N3G - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.

IPB022N12NM6 - MOSFET (Infineon)
IPB022N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.