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IPB026N06N Power-Transistor

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Description

Type OptiMOSTM Power-Transistor .

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Features

* Optimized for synchronous rectification
* 100% avalanche tested
* Superior thermal resistance
* N-channel, normal level

Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V. .10V) IPB026N06N 60 V 2.6 mW 100 A 65 nC 56 nC PG-TO263-3 Type IPB026N06N Package PG-TO263-3 Marking 026N06N Maximum ratings, at T j=25 °C, unless oth

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