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IPB80CN10NG Power-Transistor

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Description

IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS®2 Power-Transistor .

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Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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