IPD35N10S3L-26 Power-Transistor

Infineon Technologies

Description

OptiMOS®-T Power-Transistor .

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Datasheet Specifications

Part number: IPD35N10S3L-26
Manufacturer: Infineon ↗ Technologies
File Size: 319.66 KB
Datasheet: IPD35N10S3L-26-InfineonTechnologies.pdf
Description: Power-Transistor

Features

* N-channel - Enhancement mode
* Automotive AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* RoHS compliant
* 100% Avalanche tested IPD35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 24 mW 35 A PG-TO252-3-11 T

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IPD35N10S3L-26 Power-Transistor Infineon Technologies

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