IPD35N10S3L-26 Datasheet - Infineon Technologies

IPD35N10S3L-26 - Power-Transistor

IPD35N10S3L-26 Features

* N-channel - Enhancement mode

* Automotive AEC Q101 qualified

* MSL1 up to 260°C peak reflow

* 175°C operating temperature

* RoHS compliant

* 100% Avalanche tested IPD35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 24 mW 35 A PG-TO252-3-11 T

Datasheet Details

IPD35N10S3L-26

Infineon ↗ Technologies

319.66 KB

Power-transistor.

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