IPI082N10N3G Datasheet - Infineon Technologies

IPI082N10N3G, Power-Transistor

www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor .

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Datasheet Details

Part number:

IPI082N10N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

542.90 KB

Description:

Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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IPI082N10N3G Power-Transistor Infineon Technologies

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