✔ IPI08CN10NG Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS c
PDF File Details
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Part number:
IPI08CN10NG
Manufacturer:
Infineon ↗ Technologies
File Size:
563.42kb
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📄 Datasheet
Description:
Power-transistor.
IPI08CNE8NG - Power-Transistor
(Infineon Technologies)
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IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R.
IPI082N10N3G - Power-Transistor
(Infineon Technologies)
.DataSheet.co.kr
IPP086N10N3 G IPB083N10N3 G
IPI086N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excelle.
IPI084N06L3G - Power-Transistor
(Infineon)
Type
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent g.
IPI086N10N3 - Power-Transistor
(Infineon)
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(.
IPI086N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPI086N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.2mΩ ·Enhancement mode ·F.
IPI086N10N3G - Power-Transistor
(Infineon)
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(.
IPI020N06N - Power Transistor
(Infineon Technologies)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPI023NE7N3G - Power-Transistor
(Infineon)
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IPI024N06N3 - Power Transistor
(Infineon)
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Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
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IPI024N06N3G - Power-Transistor
(Infineon Technologies)
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Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
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