IPI086N10N3G Datasheet - Infineon

IPI086N10N3G - Power-Transistor

IPI086N10N3G Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qual

Datasheet Details

IPI086N10N3G

757.25 KB

Power-transistor.

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