IPI111N15N3G Power Transistor

Infineon Technologies

Description

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A .

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Datasheet Specifications

Part number: IPI111N15N3G
Manufacturer: Infineon ↗ Technologies
File Size: 732.59 KB
Datasheet: IPI111N15N3G-InfineonTechnologies.pdf
Description: Power Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; Halogen free

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IPI111N15N3G Power Transistor Infineon Technologies

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