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IPI111N15N3G Datasheet - Infineon Technologies

IPI111N15N3G Power Transistor

IPI111N15N3G Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on)

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant; Halogen free

* Qualified according to JEDEC1) for target application

Datasheet Details

IPI111N15N3G

Infineon ↗ Technologies

732.59 KB

Power transistor.

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