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IPI126N10N3G

Power-Transistor

IPI126N10N3G Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on)

* 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A

* Pb-free lead plating; RoHS compliant

* Quali

IPI126N10N3G Datasheet (338.70 KB)

Preview of IPI126N10N3G PDF

Datasheet Details

Part number:

IPI126N10N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

338.70 KB

Description:

Power-transistor.

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IPI126N10N3G Power-Transistor Infineon Technologies

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