IPI65R660CFD Datasheet, Transistor, Infineon Technologies

PDF File Details

Part number:

IPI65R660CFD

Manufacturer:

Infineon ↗ Technologies

File Size:

3.03MB

Download:

📄 Datasheet

Description:

Power transistor.

IPI65R660CFD Application

• Applications 9 8, 3 2,available in Halogen free mold compounda) 2 %2% % 3 $ 8 )? 18 ) ? 2# 2) $ ) #2 ( ) ! "#$ %& ' ( )) +, -. 0 .1 3&11

TAGS

IPI65R660CFD

Infineon Technologies

📁 Related Datasheet

IPI65R660CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.66Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .

IPI65R600C6 - Power Transistor (Infineon Technologies)
GIM@?N + =L 9 D- PA <= 1 =E A ;G F > =;L2J 9 FK A K L G J GGD+ - 1     4 G G D + - 1 Y  . G O=J2J 9 FK A K L G J '. P  .

IPI65R600C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.

IPI65R065C7 - MOSFET (Infineon)
# $% &% '( ) * + * , * $ 2 # 32 # 3# $ 3 4 *3 3 # 45 6 78 4 4 4 92 # 3% 9# 4 # 37 44 # # 3# $% # 3 $ 4$ 9 #3 7 # 3 % 2 #3.

IPI65R099C6 - MOSFET (Infineon)
# $% &% '( ) * + * , * $ 2 # 32 # 3# $ 3 4 *3 3 # 45 6 78 4 4 4 92 # 3% 9# 4 # 37 44 # # 3# $% # 3 $ 4$ 9 #3 7 # 3 % 2 #3.

IPI65R099C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.

IPI65R110CFD - MOSFET (Infineon)
## $ %& & '( ) ## * + ## , ## * ## * ## % 2 $ 32 $ 3$ % 3 4 *3 3 $ 45 6 78 4 4 4 92 $ 3& 9 $4 $ 37 44 $ $ 3$ % &.

IPI65R110CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.11Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .

IPI65R150CFD - MOSFET (Infineon)
# $ %& & '( ) # * + # , # * # * # % 2 $ 32 $ 3$ % 3 4 *3 3 $ 45 6 78 4 4 4 92 $ 3& 9 $4 $ 37 44 $ $ 3$ % &$ 3 %.

IPI65R150CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.15Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche .