SIGC16T120C Datasheet (Infineon Technologies)

SIGC16T120C, IGBT

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

SIGC16T120C Features

* 1200V NPT technology

* 200µm chip

* short circuit prove

* positive temperature coefficient

* easy paralleling C This chip is used for:

* BUP 311D /BUP 212 Applications:

* drives G E Chip Type SIGC16T120C VCE 1200V ICn 8A Die Size 4.04