2ED2304S06F

650V Half Bridge Gate Driver

Infineon

* Infineon thin-film-SOI-technology

* Fully operational to +650 V

* Floating channel designed for bootstrap operation

* Output source/sink current capability +0.36 A/-0.7 A

* Integrated Ultra-fast, low RDS(ON) Bootstrap Diode

* Tolerant to negative transient voltage up to -10

2ED2304S06F

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650v half bridge gate driver.

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2ED2304S06F 650V Half Bridge Gate Driver Infineon

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