AIMBG120R010M1 - 1200V SiC Trench MOSFET
AIMBG120R010M1 Features
* VDSS = 1200 V at Tvj = -55175°C
* IDDC = 205A at TC = 25°C
* RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C
* New performance-optimized chip technology (Gen1p) with improved RDSon
* A
* Best in class switching energy for lower switching losses and reduced coo
